激光诱导机载等离子体冲击波去除硅片上的小颗粒( Removal of small particles on silicon wafer by laser-induced airborne plasma shock waves )

JM Lee KG Watkins Practical, Theoretical or Mathematical, Experimental/ adhesion elemental semiconductors laser ablation plasma materials processing shock wave effects silicon surface cleaning surface contamination tungsten/ small particles removal Si wafer laser-induced airborne plasma shock waves W particles laser cleaning direct laser irradiation cleaning efficiency adhesion forces 1 mum Si W/ A8160C Surface treatment and degradation in semiconductor technology A6820 Solid surface structure A5275R Plasma applications in manufacturing and materials processing A4262A Laser materials processing A6250 High-pressure and shock-wave effects in solids and liquids A6180B Ultraviolet, visible and infrared radiation effects A7920D Laser-surface impact phenomena B2550E Surface treatment (semiconductor technology) B2520C Elemental semiconductors B4360B Laser materials processing/ size 1.0E-06 m/ Si/sur Si /el W/el

已经发现，从硅片表面有效去除小颗粒可以通过在表面上方引发的激光诱导的空气传播等离子体冲击波来实现。该工艺成功地从表面去除了1 μm大小的钨颗粒。众所周知，钨是使用常规激光清洁技术去除的最困难的颗粒之一，该技术采用直接激光照射到表面上。冲击波清洗的面积比常规激光清洗的面积大十倍以上。这为清洁大面积区域提供了速度上的优势。清洁效率强烈依赖于激光焦点（发生激光诱导火花的地方）和表面之间的间隙距离。颗粒去除开始于6 mm的间隙，并且随着间隙的减小，去除效率显著增加，导致在2 mm处完全去除。描述了这种新清洁技术背后的基本思想，以及如何应用它来去除表面的小颗粒。为了理解这一过程，对表面小颗粒的粘附力和激光诱导冲击波的产生进行了理论考虑。

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