电诱导液体渗滤法合成碳/碳碳化硅复合材料( Electrically induced liquid infiltration for the synthesis of carbon/carbon–silicon carbide composite )

AS Mukasyan JDE White Experimental/ carbon ceramics composite materials compressive strength crystal microstructure electric field effects heat treatment melt infiltration porous materials preforms reaction kinetics silicon compounds wide band gap semiconductors/ electrically induced liquid infiltration carbon-carbon-silicon carbide composite Joule preheating porous carbon-carbon preform pore structure silicon infiltration heat treatment infiltration depth reaction kinetics microstructure compressive strength time 5 s to 20 s C-C-SiC/ A8120N Preparation of cermets, ceramic and refractory composites A6140G Structure of powders and porous materials A8140G Other heat and thermomechanical treatments A6480G Microstructure A6220F Deformation and plasticity A8140L Deformation, plasticity and creep B0550 Composite materials (engineering materials science) B0540 Ceramics and refractories (engineering materials science) B2520M Other semiconductor materials/ time 5.0E+00 to 2.0E+01 s/ CCSiC/ss Si/ss C/ss CCSiC/bin Si/

研究了电诱导液渗法合成碳/碳-碳化硅（C/C-SiC）材料。该方法包括对多孔碳/碳预制体进行焦耳预热，然后将硅渗透到孔结构中，并与碳反应形成无孔C/C-SiC复合材料。该技术的特点是加热速率高（10 2-10 3 K/s）和处理时间短（5-20 s）,这与传统方法不同。研究了最高处理温度和预热速率对浸渗深度、反应动力学和材料微观结构的影响。合成的C/C-SiC复合材料的抗压强度是原C/C材料的两倍。

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