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聚酰亚胺/四乙氧基硅烷复合聚合物微电子应用( Polyimide/tetraethoxysilane-based hybrid polyfilms for microelectronics application )
SK Kurmvanshi PR Patel AK Patel R Bajpai JM Keller Practical, Experimental/ absorption atomic force microscopy curing Fourier transform spectra infrared spectra integrated circuits permittivity polymer films/ polyimide-tetraethoxysilane-based hybrid polyfilms microelectronics application inorganic-organic hybrid material low dielectric constant materials mechanical properties hygroscopic properties polyamic acid curing Dielectric Impedance Analyzer silica domains FTIR analysis Fourier transform infrared spectra silica generation AFM analysis atomic force microscopy Universal Testing Machine water absorption isotherms morphology temperature 350 degC SiO 2/ A8120T Preparation of reinforced polymers and polymer-based composites A6140K Structure of polymers, elastomers, and plastics A6820 Solid surface structure A6855 Thin film growth, structure, and epitaxy A7360R Electrical properties of organic compounds and polymers (thin films/low-dimensional structures) A7720 Dielectric permittivity A7830L Infrared and Raman spectra in disordered s
–10wt% concentration of TEOS exhibit good overall balance of processing behaviour. The 350°C cured PI+TEOS films have shown lower dielectric constant with respect to PI. The lower dielectric constant of PI+TEOS films, as determined by Dielectric Impedance Analyzer was attributed to the in situ generation of air containing silica domains derived from TEOS dispersed within the PI matrix in nano meter regime. FTIR analysis has confirmed the generation of silica while AFM analysis showed the distinct appearance of silica domains dispersed into the PI matrix. The mechanical properties were evaluated by Universal Testing Machine on PI and PI/TEOS films. The films with 10–1wt% composition of TEOS showed enhancement in overall mechanical properties while higher concentration i.e. 5 and 10 wt% of TEOS containing PI showed deterioration with respect to pure PI. The water absorption isotherms were measured and their absorption behaviour was correlated with dielectric constant and associated morphology.
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