铝/阳极化铝膜结构中的电阻开关，无成形工艺( Resistive switching in aluminum/anodized aluminum film structure without forming process )

W Zhu TP Chen Z Liu M Yang Y Liu S Fung Experimental/ aluminium anodisation hopping conduction metallic thin films MIM structures ohmic contacts/ resistive switching aluminum anodized aluminum film structure forming process metal-insulator-metal structure resistance state pre-existing conductive filaments anodization metallic conduction electron hopping Al-Al xO y/ A7340R Electrical properties of metal-insulator-metal structures A6855 Thin film growth, structure, and epitaxy A8160B Surface treatment and degradation of metals and alloys A7340N Electrical properties of metal-nonmetal contacts B2530G Metal-insulator-metal and metal-semiconductor-metal structures/ Al-AlO/int AlO/int Al/int O/int AlO/bin Al/bin O/bin Al/el

通过对铝膜进行部分阳极氧化，再沉积另一层铝膜，制备了金属-绝缘体-金属(MIM)结构。从结构上观察到高阻态和低阻态之间的单极性电阻切换，电阻比高(>104)。这是由于阳极氧化形成的Al-RichalxOy层中预先存在导电丝所致。每一个电阻态都表现出欧姆行为，这可以通过金属的传导和电子从一个孤立态到另一个孤立态的跳跃来解释。MIM结构显示出良好的记忆特性。

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