电沉积法制备ZnO薄膜的生长与表征( Growth and characterization of ZnO thin films prepared by electrodeposition technique )

M Fahoume O Maghfoul M Aggour B Hartiti F Chra?Bi A Ennaoui Experimental/ crystal structure electrodeposition electrodeposits II-VI semiconductors optical constants scanning electron microscopy semiconductor growth semiconductor thin films surface morphology transmission electron microscopy wide band gap semiconductors X-ray diffraction zinc compounds/ thin films electrodeposition pH film growth kinetics acidic solution basic solution X-ray diffraction transmission electron microscopy surface morphology scanning electron microscopy hexagonal crystal structure optical transmittance optical energy bandgap ZnO SnO-SiO 2 Cu/ A6855 Thin film growth, structure, and epitaxy A8115L Deposition from liquid phases (melts and solutions) A8245 Electrochemistry and electrophoresis A7865K Optical properties of II-VI and III-V semiconductors (thin films/low-dimensional structures) A6820 Solid surface structure A7820D Optical constants and parameters (condensed matter) B2520D II-VI and III-V semiconductors B0520J Deposition from liquid phases/ ZnO/bin Zn

以氯化锌和流动空气为前驱体，采用电沉积法在镀有氧化铟锡的玻璃或铜衬底上沉积了ZnO薄膜。研究了pH值对ZnO薄膜结构和形貌的影响，并给出了最佳沉积条件。研究了薄膜的生长动力学。我们注意到ZnO在酸性溶液中的沉积速率大于在碱性溶液中的沉积速率。用X射线衍射仪(XRD)和透射电镜(TEM)研究了薄膜的结构。用扫描电镜测定了薄膜的表面形貌和厚度。X射线衍射分析表明，在pH值为4的条件下，薄膜为六方晶型（锌）多晶。ZnO薄膜的光学透过率随薄膜厚度的变化而降低。光能带隙为3.26eV。

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