射频磁控溅射法制备掺锆氧化锌薄膜的结构、电学和光学性质( Structural, electrical and optical properties of zirconium-doped zinc oxide films prepared by radio frequency magnetron sputtering )

M Lv X Xiu Z Pang Y Dai L Ye C Cheng S Han Experimental/ carrier density conducting materials electrical conductivity electrical resistivity energy gap grain boundaries Hall mobility sputter deposition thin films zinc compounds zirconium/ structural properties electrical properties optical properties radio frequency magnetron sputtering transparent films conducting films crystalline films hexagonal structure crystallinity conductivity grain boundaries resistivity Hall mobility carrier concentration transmittance optical band gap temperature 293 K to 298 K ZnO:Zr/ A6855 Thin film growth, structure, and epitaxy A8115C Deposition by sputtering A7865P Optical properties of other inorganic semiconductors and insulators (thin films/low-dimensional structures) A6170N Grain and twin boundaries A7220M Galvanomagnetic and other magnetotransport effects (semiconductors/insulators) A7125T Electronic structure of crystalline semiconductor compounds and insulators/ temperature 2.93E+02 to 2.98E+02 K/ ZnO:Zr/ss ZnO/ss Zn/ss Zr/ss O/ss ZnO/

采用射频磁控溅射法在室温下制备了透明导电的掺锆氧化锌薄膜。靶材中ZrO2含量为0～10wt.%。薄膜是具有六方结构和沿c轴择优取向的多晶。随着ZrO2含量的增加，薄膜的结晶度和电导率先是提高，然后两者都出现恶化。当ZrO2含量为3%和5wt.%时，Zr原子主要取代Zn原子，但当ZrO2含量较高时，Zr原子倾向于簇入晶界。当ZrO2含量为5wt.%时，其最低电阻率为2.07×103Ωcm，霍尔迁移率为16cm2V1S1，载流子浓度为1.95×1020cm3。所有薄膜在可见光范围内都具有90%以上的高透过率。光学带隙依赖于载流子浓度，载流子浓度越高，带隙值越大。

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