应力对CVD金刚石光学线和ESR线的影响( Effect of stress on optical and ESR lines in CVD diamond )

K Iakoubovskii A Stesmans GJ Adriaenssens R Provoost RE Silverans V Raiko Experimental/ CVD coatings defect states diamond elemental semiconductors internal stresses nitrogen paramagnetic resonance photoluminescence Raman spectra semiconductor thin films/ diamond thin films CVD chemical vapour deposition nitrogen-doped films electron spin resonance Raman spectra photoluminescence stress effects substitutional nitrogen center internal stress 4.2 to 300 K C C:N/ A7865H Optical properties of elemental semiconductors (thin films/low-dimensional structures) A6855 Thin film growth, structure, and epitaxy A7155E Impurity and defect levels in elemental semiconductors A7630M EPR of colour centres and other defects A7830G Infrared and Raman spectra in inorganic crystals A8115H Chemical vapour deposition A6860 Physical properties of thin films, nonelectronic/ temperature 4.2E+00 to 3.0E+02 K/ C/el C:N/bin C /bin N/bin C/el N /el N/dop

研究了未掺杂和掺氮的CVD金刚石薄膜的拉曼、光致发光(PL)和电子自旋共振(ESR)信号之间的关系。即使对于在基本相同的生长条件下制备的薄膜，也没有观察到金刚石拉曼线的位移与其线宽之间的相关性。发现金刚石拉曼峰宽度的增加与零声子PL线的展宽和取代氮(P1)中心ESR信号结构的变化有关。从内应力引起的P1中心对称性降低的角度解释了ESR谱中观察到的变化。

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